收藏本站
Linear TM Power MOSFET
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTN17N120L
G
D
V DSS
I D25
R DS(on)
= 1200V
= 15A
< 900m Ω
Guaranteed FBSOA
S
S
miniBLOC
E153432
S
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
1200
V
G
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1200
± 30
± 40
V
V
V
D
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
15
34
A
A
G = Gate
S = Source
D = Drain
I A
E AS
P D
T J
T JM
T stg
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
50/60 Hz, RMS, t = 1minute
I ISOL ≤ 1mA, t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
8.5
2.5
540
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.3/11.5
30
A
J
W
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Designed for Linear Operations
International Standard Package
Molding Epoxies Meet UL94 V-0
Flammability Classification
Guaranteed FBSOA at 60oC
miniBLOC with Aluminum Nitride
Isolation
Low R DS(on) HDMOS TM Process
Rugged Polysilicon Gate Cell
Structure
Low Package Inductance
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Advantages
BV DSS
V GS = 0V, I D = 1mA
1200
V
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
3.0
6.0
± 200
V
nA
Easy to Mount
Space Savings
High Power Density
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 20V, I D = 8.5A, Note 1
T J = 125 ° C
50 μ A
2 mA
900 m Ω
Applications
Programmable Loads
Current Regulators
DC-DC Convertors
Battery Chargers
DC Choppers
Temperature and Lighting Controls
? 2010 IXYS CORPORATION, All Rights Reserved
DS99814C(05/10)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTN200N10T MOSFET N-CH 100V 200A SOT-227
IXTN22N100L MOSFET N-CH 1000V 22A SOT-227
IXTN32P60P MOSFET P-CH 600V 32A SOT227
IXTN46N50L MOSFET N-CH 500V 46A SOT-227B
IXTN550N055T2 MOSFET N-CH 55V 550A SOT-227
IXTN60N50L2 MOSFET N-CH 53A 500V SOT-227
IXTN62N50L MOSFET N-CH 500V 62A SOT-227
IXTN90N25L2 MOSFET N-CH 90A 250V SOT-227
相关代理商/技术参数
IXTN200N10L2 功能描述:MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN200N10T 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN210P10T 功能描述:MOSFET TrenchP Channel Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN21N100 功能描述:MOSFET 21 Amps 100V 0.55 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN21N100 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXTN22N100L 功能描述:MOSFET 22 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN30N100L 功能描述:MOSFET 30 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTN320N10T 功能描述:MOSFET 320 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube